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Ordering number : ENN6958
MCH5803
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
MCH5803
DC / DC Converter Applications
Features
*
Package Dimensions
Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3408) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * 4V drive. [SBD] * Short reverse recovery time. * Low forward voltage.
[MCH5803]
0.25 0.3 0.15
4
1.6
5
2.1
0.25
32 0.65
2.0
0.07
1
(Bottom view) 0.85
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 10 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (600mm2!0.8mm) 1unit 30 20 1.4 5.6 0.8 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit
Marking : QC
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM IWAIDA TA-3177 No.6958-1/5
MCH5803
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.3A IF=0.5A VR=10V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 30 0.35 0.42 20 10 0.40 0.47 200 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=700mA ID=700mA, VGS=10V ID=400mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0 1.2 0.85 1.2 230 370 70 15 10 6 3 10 4 2.6 0.6 0.5 0.9 1.2 300 520 30 1 10 2.6 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Electrical Connection (Top view)
D C
G : Gate S : Source A : Anode C : Cathode D : Drain
G S A
Switching Time Test Circuit
[MOSFET]
VIN 10V 0V VIN ID=700mA RL=21.4 VDD=15V
trr Test Circuit
[SBD] 100mA
Duty10% 50 100 10
10mA
D
PW=10s D.C.1%
VOUT
10s --5V
100mA
trr
G
MCH5803 P.G 50
S
No.6958-2/5
MCH5803
8V
6V 5V
VDS=10V
10
Drain Current, ID -- A
Drain Current, ID -- A
1.5
V
4V
1.2
1.0
0.8
1.0
VGS=3V
0.5
0.6
0.4
Ta =7
0 0 0.2 0.4 0.6 0.8 1.0
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
800
Drain-to-Source Voltage, VDS -- V IT03097 RDS(on) -- VGS [MOSFET] Ta=25C
800
IT03098 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10
700 600 500 400 300 200 100 0 --60
0.7A ID=0.4A
0.4A I D=
=4V , VGS
=10V , VGS
.7A I D=0
--40
--20
0
20
40
60
--2
80
5
100 120
C
0.2
5 C
75C
140
10
Gate-to-Source Voltage, VGS -- V IT03099 yfs -- ID [MOSFET] VDS=10V
Ambient Temperature, Ta -- C
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01
IF -- VSD
Forward Transfer Admittance, yfs -- S
7 5 3 2
C 25
1.0 7 5 3 2
= Ta
C 75
--2 C 5
Forward Current, IF -- A
0.1 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Drain Current, ID -- A
5 3
7 10 IT03101 100 7 5
0
0.2
0.4
Ta=7 5C 25C --25C
0.6
0.8
1.0
SW Time -- ID
[MOSFET] VDD=15V VGS=10V
Diode Forward Voltage, VSD -- V IT03102 [MOSFET] Ciss, Coss, Crss -- VDS
Ciss
Switching Time, SW Time -- ns
2
td(off)
10 7 5 3 2
Ciss, Coss, Crss -- pF
3 2
Coss
10 7 5 3 2
td(on)
Crss
tr
1.0 5 7 0.1 2 3 5 7 1.0 2 3
1.0 0 5 10 15 20 25 30 IT03104
Drain Current, ID -- A
IT03103
Drain-to-Source Voltage, VDS -- V
Ta= -25C 75C 25C
160 IT03100
2.0
ID -- VDS
[MOSFET]
1.4
ID -- VGS
[MOSFET]
[MOSFET] VGS=0
1.2
1.4
f=1MHz
tf
No.6958-3/5
MCH5803
10
VGS -- Qg
VDS=10V ID=1.4A
[MOSFET]
10 7 5 3 2
ASO
IDP=5.6A
10
[MOSFET] <10s
10
Gate-to-Source Voltage, VGS -- V
s 0 s 1m
8
Drain Current, ID -- A
ID=1.4A
m
6
1.0 7 5 3 2 0.1 7 5 3 2
s
s on 0m ati 10 per o C D
4
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(600mm2!0.8mm) 1unit
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5
2
0 0 0.5 1.0 1.5 2.0 2.5 IT03105
0.01 0.01
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT03106
[MOSFET]
Allowable Power Dissipation, PD -- W
0.8
M
ou
nt
ed
on
0.6
ac
er
am
ic
bo
0.4
ar
d(
60
0m
m2 !0
0.2
.8m
m
)1
un
it
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
10 7 5
IT03107
IF -- VF
[SBD]
Reverse Current, IR -- mA
Forward Current, IF -- A
3 2 1.0
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 5 10
IR -- VR
[SBD]
1 Ta=
25
C
0 C
7 5 3 2 0.1 7 5 3 2 0.01 0
= Ta
5 12
C
100C
2
50 C
5C
10
75C
50C
25C
75
C
0.2
0.4
0.6
0.8
1.0 IT00632
15
20
25
30 IT00633
Diode Forward Voltage, VSD -- V
Average Forward Power Dissipation, PF(AV) -- W
0.4 0.35 0.3 0.25 0.2
PF(AV) -- IO
Reverse Voltage, VR -- V
100 7
[SBD] (3) (4)
C -- VR
[SBD] f=1MHz
Interterminal Capacitance, C -- pF
(1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 (1) (2)
5 3 2
10 7 5 3 2 1.0 1.0
Rectangular wave
0.15 0.1 360
Sine wave
0.05 0 0 0.1 0.2 0.3 0.4 180 360 0.5
0.6
0.7 IT00634
2
3
5
7
10
2
3
5
Average Forward Current, IO -- A
Reverse Voltage, VR -- V
7 100 IT00635
No.6958-4/5
MCH5803
12
IS -- t
IS
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
10
8
20ms t
6
4
2
0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s
IT00636
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice.
PS No.6958-5/5

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